Part number:
HGTP11N120CN
Manufacturer:
Fairchild Semiconductor
File Size:
138.07 KB
Description:
N-channel igbt.
HGTP11N120CN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTP11N120CN Datasheet (138.07 KB)
Datasheet Details
HGTP11N120CN
Fairchild Semiconductor
138.07 KB
N-channel igbt.
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