* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTP7N60B3 Datasheet (92.89 KB)
HGTP7N60B3
Intersil Corporation
92.89 KB
N-channel igbt.
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Data Sheet January 2000 File Number 4412.2
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60B3S, HGT1S7N60B3S .
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