* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The
HGTP7N60B3D Datasheet (163.69 KB)
HGTP7N60B3D
Fairchild Semiconductor
163.69 KB
N-channel igbt.
HGTP7N60B3D, HGT1S7N60B3DS
Data Sheet December 2001
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1.
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