HGTP7N60B3D - N-Channel IGBT

Fairchild Semiconductor

Datasheet Details

Part number	HGTP7N60B3D
Manufacturer	Fairchild ↗ Semiconductor
File Size	163.69 KB
Description	N-Channel IGBT
Datasheet	HGTP7N60B3D_FairchildSemiconductor.pdf

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |