* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGTP7N60A4 Datasheet (204.51 KB)
HGTP7N60A4
Fairchild Semiconductor
204.51 KB
N-channel igbt.
HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4
Data Sheet August 2003
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS g.
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