HGTP7N60C3D - N-Channel IGBT

Fairchild Semiconductor

Datasheet Details

Part number	HGTP7N60C3D
Manufacturer	Fairchild ↗ Semiconductor
File Size	528.34 KB
Description	N-Channel IGBT
Datasheet	HGTP7N60C3D_FairchildSemiconductor.pdf

The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |