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HGTP7N60C3D UFS Series N-Channel IGBT

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Description

HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Feat.
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transi.

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Datasheet Specifications

Part number
HGTP7N60C3D
Manufacturer
HARRIS
File Size
196.80 KB
Datasheet
HGTP7N60C3D-HARRIS.pdf
Description
UFS Series N-Channel IGBT

Features

* 14A, 600V at TC = 25oC
* 600V Switching SOA Capability
* Typical Fall Time
* . . . . 140ns at TJ = 150oC
* Short Circuit Rating
* Low Conduction Loss
* Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB COLLECTOR (FLANGE) EMIT

Applications

* ope

HGTP7N60C3D Distributors

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