Datasheet Details
- Part number
- HGTP7N60C3D
- Manufacturer
- HARRIS
- File Size
- 196.80 KB
- Datasheet
- HGTP7N60C3D-HARRIS.pdf
- Description
- UFS Series N-Channel IGBT
HGTP7N60C3D Description
HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Feat.
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transi.
HGTP7N60C3D Features
* 14A, 600V at TC = 25oC
* 600V Switching SOA Capability
* Typical Fall Time
* . . . . 140ns at TJ = 150oC
* Short Circuit Rating
* Low Conduction Loss
* Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMIT
HGTP7N60C3D Applications
* ope
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