HUFA75429D3S mosfet equivalent, n-channel mosfet.
* 175°C Maximum Junction Temperature
* UIS Capability (Single Pulse and Repetitive Pulse)
* Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V
DRAIN (FLANGE.
where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, l.
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding hig.
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