HUFA75433S3S Datasheet - Fairchild Semiconductor

HUFA75433S3S N-Channel MOSFET

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhib.

HUFA75433S3S Features

* 175°C Maximum Junction Temperature

* UIS Capability (Single Pulse and Repetitive Pulse)

* Ultra-Low On-Resistance rDS(ON) = 0.016Ω, VGS = 10V D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Sour

HUFA75433S3S Datasheet (301.69 KB)