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IRF620A - Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω(Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche.

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Full PDF Text Transcription

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Advanced Power MOSFET IRF620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω(Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.
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