* 18A, 200V
* rDS(ON) = 0.180Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speed
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for S
IRF640
Fairchild Semiconductor
132.20 KB
200v n-channel mosfet.
IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po.
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