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* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche test.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

IRF710

IRF7101

IRF7101PBF

IRF7102

IRF7103

IRF7103PBF

IRF7103Q

IRF7103QPbF

IRF7104

IRF7104PBF

IRF7105

IRF7105PBF

IRF7105QPBF