IRF7101 mosfet equivalent, power mosfet.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability.
HEXFET® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
VDSS = 20V RDS(on) = 0.10Ω
ID = 3.5A
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possibl.
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