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IRLI610A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 150° C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
  • Lower RDS(ON): 1.185Ω (Typ. ) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Chara.

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www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3.
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