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RFD14N05LSM - N-Channel Logic Level Power MOSFET

Download the RFD14N05LSM datasheet PDF. This datasheet also covers the RFD14N05L variant, as both devices belong to the same n-channel logic level power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE® Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) ©2004.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RFD14N05L-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
RFD14N05LSM 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil Corporation
RFD14N05L 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil Corporation
RFD14N05 Avalanche Rated N-Channel Enhancement-Mode Power MOSFET HARRIS
RFD14N05SM Avalanche Rated N-Channel Enhancement-Mode Power MOSFET HARRIS
RFD14N06L N-Channel Power MOSFET Intersil Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
RFD14N05L N-Channel Logic Level Power MOSFET
RFD14N05 14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs
RFD14N05SM N-Channel Power MOSFET
RFD14N05SM9A N-Channel Power MOSFET
RFD12N06RLE 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet RFD14N05L, RFD14N05LSM October 2013 N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.