Download S9012 Datasheet PDF
Fairchild Semiconductor
S9012
S9012 is PNP Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor.
SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. - High total power dissipation. (PT=625m W) - High Collector Current. (IC= -500m A) - plementary to SS9013 - Excellent h FE linearity. PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature TO-92 1. Emitter 2. Base 3. Collector Ratings -40 -20 -5 -500 625 150 -55 ~ 150 Units V V V m A m W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE (sat) VBE (sat) VBE (on) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = -100µA, IE =0 IC = -1m A, IB =0 IE = -100µA, IC =0 VCB = -25V, IE =0 VEB = -3V, IC =0 VCE = -1V, IC = -50m A VCE = -1V, IC = -500m A IC = -500m A, IB = -50m A IC = -500m A, IB = -50m A VCE = -1V, IC = -10m A Min. -40 -20 -5 64 40 -0.6 Typ. 120 90 -0.18 -0.95 -0.67 Max. -100 -100 202 Units V V V n A n...