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Advanced Power MOSFET
SFR/U9120
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy
O2 O1 O1
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) * Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp.
SFU9120 Datasheet
