TIP105 Datasheet - Fairchild Semiconductor

TIP105 PNP Epitaxial Silicon Darlington Transistor

TIP105 Features

* Monolithic Construction with Built-in Base-Emitter Shunt Resistors

* High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)

* Collector-Emitter Sustaining Voltage

* Low Collector-Emitter Saturation Voltage

* Industrial Use

* Complementary

Datasheet Details

TIP105

Fairchild Semiconductor

211.20 KB

Pnp epitaxial silicon darlington transistor.

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