FIR150N06PG mosfet equivalent, n-channel enhancement mode power mosfet.
ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and unifo.
General Features
ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
ƽ High density cell design for ultra low Rdson ƽ Fully ch.
Image gallery
Download