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MHVIC915NR2 - RF LDMOS Wideband Integrated Power Amplifier

General Description

4.7 pF High Q Capacitors (0603) 47 pF NPO Capacitors (0805) 1 μF X7R Chip Capacitors (1214) 10 μF, 50 V Electrolytic Capacitor 0.01 μF X7R Chip Capacitors (0805) 8.2 pF NPO Chip Capacitor (0805) 1 kW Chip Resistors (0603) 100 kW Chip Resistors (0603) Part Number ATC600S4R7CW GRM40- 001COG470J050BD G

Key Features

  • 10. Spectral Regrowth @ 400 kHz versus Output Power RF Device Data Freescale Semiconductor.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.