MHVIC2115NR2 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) - Integrated Temperature pensation with Enable/Disable Function - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ 2170 MHz, 26 V, 23/34 d Bm W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER 16 1 CASE 978 - 03 PFP - 16 Value - 0.5, +65 - 0.5, +15 - 65 to +150 150 Unit Vdc Vdc °C °C N.C. VGS3 VGS2 VGS1 Quiescent Current Temperature pensation VGS3 VGS2 VGS1 RFin RFin IC VDS3/RFout RFin VDS1 VDS2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C. VDS1 VDS2 3 Stages IC (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Block Diagram Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2006. All rights reserved. MHVIC2115NR2 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = +0.2 W CW) Output Application (Pout = +2.5 W CW) Stage 1, 26 Vdc, IDQ = 96 m A Stage 2, 26 Vdc, IDQ = 204 m A Stage 3, 26 Vdc, IDQ = 111 m A Stage 1, 27 Vdc, IDQ = 56 m A Stage 2, 27 Vdc, IDQ = 61 m A Stage 3, 27 Vdc, IDQ = 117 m A Symbol RθJC 3.5 Value Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M1 (Minimum) C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD...