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MHVIC2114NR2 - RF LDMOS Wideband Integrated Power Amplifier

Datasheet Summary

Description

1 μF Tantalum Chip Capacitors 0.01 μF Chip Capacitors 6.8 pF Chip Capacitors (ACCU - P) 1.5 pF Chip Capacitor (ACCU - P) 2.2 pF Chip Capacitors (ACCU - P) 1.0 pF Chip Capacitor (ACCU - P) 330 μF Electrolytic Capacitors 1 kW Chip Resistors (0805) Part Number TAJA105K035R 0805C103K5RACTR AVX08051J6R8B

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output).
  • Integrated Temperature Compensation with Enable/Disable Function.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MHVIC2114NR2 2100 MHz, 27 V, 23 dBm SINGLE W - CDMA RF LDMOS.

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Datasheet Details

Part number MHVIC2114NR2
Manufacturer Freescale Semiconductor
File Size 560.84 KB
Description RF LDMOS Wideband Integrated Power Amplifier
Datasheet download datasheet MHVIC2114NR2 Datasheet
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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact.
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