MHV5IC2215NR2
MHV5IC2215NR2 is RF LDMOS Wideband Integrated Power Amplifier manufactured by Freescale Semiconductor.
Features
- On
- Chip Matching (50 Ohm Input, >5 Ohm Output) ..
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function
- On
- Chip Current Mirror gm Reference FET for Self Biasing Application (1)
- Integrated ESD Protection
- Ro HS pliant
- In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
VRD1 VRG1 VDS1 2 Stage IC VDS2/RFout
2170 MHz, 23 d Bm, 28 V SINGLE N
- CDMA, SINGLE W
- CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
16 1
CASE 978
- 03 PFP
- 16
N.C. VRD1 VRG1 VDS1 GND RFin VGS1 VGS2
1 2 3 4 5 6 7 8 (Top View)
16 15 14 13 12 11 10 9
N.C. VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout N.C.
RFin
VGS1 VGS2
Quiescent Current Temperature pensation
Note: Exposed backside flag is source terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://.freescale./rf. Select Documentation/Application Notes
- AN1987.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
MHV5IC2215NR2 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain
- Source Voltage Gate
- Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value
- 0.5, +65
- 0.5, +12
- 65 to +150 150 12 Unit Vdc Vdc °C °C d Bm
Table 2. Thermal Characteristics...