MHV5IC2215NR2 Description
Freescale Semiconductor Technical Data Document Number: 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC technology and integrates a two - stage structure.
MHV5IC2215NR2 Key Features
- Chip Matching (50 Ohm Input, >5 Ohm Output)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function
- Chip Current Mirror gm Reference FET for Self Biasing Application (1)
- Integrated ESD Protection
- RoHS pliant
- In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
- CDMA, SINGLE W
- CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
- 03 PFP
- AN1987