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MHV5IC2215NR2 - RF LDMOS Wideband Integrated Power Amplifier

Datasheet Summary

Description

22 pF, 50 V Chip Capacitor 6.8 pF, 50 V Chip Capacitors 1 μF, 35 V Tantalum Chip Capacitors 330 μF, 50 V Electrolytic Chip Capacitors 0.01 μF, 50 V Chip Capacitor 2.7 pF, 50 V Chip Capacitors 15 pF, 25 V Chip Capacitor 1 kW, 1/8 W Chip Resistors Part Number 06033J220GBS 06035J6R8BBS TAJA105K035R MCR

Features

  • On - Chip Matching (50 Ohm Input, >5 Ohm Output) www. DataSheet4U. com.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • On - Chip Current Mirror gm Reference FET for Self Biasing.

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Datasheet Details

Part number MHV5IC2215NR2
Manufacturer Freescale Semiconductor
File Size 850.97 KB
Description RF LDMOS Wideband Integrated Power Amplifier
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Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC technology and integrates a two - stage structure. Its wideband on - chip matching design makes it usable from 1500 to 2200 MHz. The linearity performances cover all modulation formats for cellular applications including TD - SCDMA. Driver Application • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930 1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.
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