MHVIC915NR2 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application - Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 m A, IDQ2 = 120 m A, Pout = 34 d Bm, Full Frequency Band (746 to 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain - 31 d B Power Added Efficiency - 21% ACPR @ 750 k Hz Offset - - 50 d Bc in 30 k Hz Bandwidth Driver Applications - Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 m A, IDQ2 = 120 m A, Pout = 23 d Bm, Full Frequency Band (869 894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 31 d B Power Added Efficiency - 21% ACPR @ 750 k Hz Offset - - 60 d Bc in 30 k Hz Bandwidth ACPR @ 1.98 MHz Offset - - 66 d Bc in 30 k Hz Bandwidth - Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1d B, Full Frequency Band (921 - 960 MHz) Power Gain - 30 d B @ P1d B Power Added Efficiency = 56% @ P1d B - Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - On - Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output) - Integrated Quiescent Current Temperature pensation with Enable/Disable Function - On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. - 960 MHz, 15 W, 27 V SINGLE N - CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER 16 1 CASE...