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Freescale Semiconductor Technical Data
Document Number: MHV5IC1810N Rev. 0, 5/2006
RF LDMOS Wideband Integrated Power Amplifier
The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical Two - Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 Watts Avg.
MHV5IC1810NR2 Datasheet
