MHV5IC1810NR2 Description
Freescale Semiconductor Technical Data Document Number: 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.
MHV5IC1810NR2 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters .. and mon Source Scattering Parameters
- Chip Matching (50 Ohm Input, >5 Ohm Output)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function
- Chip Current Mirror gm Reference FET for Self Biasing Application (1)
- Integrated ESD Protection
- RoHS pliant
- In Tape and Reel. R2 Suffix = 1500 Units per 16 mm, 13 inch Reel
- 1990 MHz, 5 W AVG., 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
- 03 PFP