MHV5IC1810NR2 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters .. and mon Source Scattering Parameters - On - Chip Matching (50 Ohm Input, >5 Ohm Output) - Integrated Quiescent Current Temperature pensation with Enable/Disable Function - On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R2 Suffix = 1500 Units per 16 mm, 13 inch Reel. - 1990 MHz, 5 W AVG., 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER 16 1 CASE 978 - 03 PFP - 16 PLASTIC VRD1 VRG1 VDS1 2 Stage IC VDS2/RFout NC VRD1 VRG1 VDS1 GND RFin VGS1 VGS2 1 2 3 4 5 6 7 8 (Top View) 16 15 14 13 12 11 10 9 NC VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout NC RFin VGS1 VGS2 Quiescent Current Temperature pensation Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. MHV5IC1810NR2 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +12 - 65 to +150 150 12 Unit Vdc Vdc °C °C d Bm Table 2. Thermal Characteristics...