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MRF18030BLSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF18030BLSR3 datasheet PDF. This datasheet also covers the MRF18030BLR3 variant, as both devices belong to the same rf power field effect transistors n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel. MRF18030BLR3 MRF18030BLSR3 1930- 1990 MHz, 30 W, 26 V GSM/GSM EDGE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF18030BLR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18060ALR3 RF Power Field Effect Transistors
MRF18085ALSR3 RF Power Field Effect Transistors
MRF18085AR3 RF Power Field Effect Transistors
MRF18090AR3 RF Power Field Effect Transistor

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.
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