MRF18030BLSR3 mosfets equivalent, rf power field effect transistors n-channel enhancement-mode lateral mosfets.
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion.
with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified f.
Image gallery
Download