MRF18030BLSR3, MRF18030BLR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor

Datasheet Details

Part number	MRF18030BLSR3, MRF18030BLR3
Manufacturer	Freescale Semiconductor
File Size	373.24 KB
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Datasheet	MRF18030BLR3_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF18030BLSR3, MRF18030BLR3. Please refer to the document for exact specifications by model.

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel. MRF18030BLR3 MRF18030BLSR3 1930- 1990 MHz, 30 W, 26 V GSM/GSM EDGE.

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Published: Feb 15, 2007 |