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MRF5S9080NBR1 Datasheet

GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

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Freescale Semiconductor
Technical Data
Document Number: MRF5S9080N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
TCyWpi,cFaul lGl FSrMeqPueernfcoyrmBaanncde(:8V6D9D-
8=9246MVHozltso,rID9Q21=-
600
960
MmHAz, )P. out
=
80
Watts
Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
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Power Gain — 19 dB
www.DataSheeDtr4aUin.cEomfficiency — 42%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.5% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200_C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
MRF5S9080NR1
MRF5S9080NBR1
869 - 960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9080NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9080NBR1
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5, +65
- 0.5, +15
- 65 to +150
200
Vdc
Vdc
°C
°C
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
RθJC
0.50
0.54
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MRF5S9080NBR1 Datasheet

GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

No Preview Available !

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10
Zero Gate Voltage Drain Leakage Current
www.Da(tVaDSShe=e2t64UV.dcco,mVGS = 0 Vdc)
IDSS
1
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
— 500
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
2
2.8 3.5
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q)
3.5
3.9
4.5
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.27 0.3
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.8 —
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 600 —
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 80 W CW, f = 960 MHz
Power Gain
Gps 17 18.5 20
Drain Efficiency
ηD 55 60 —
Input Return Loss
IRL — - 15 - 9
μAdc
μAdc
nAdc
Vdc
Vdc
Vdc
pF
pF
dB
%
dB
Pout @ 1 dB Compression Point
P1dB
80
90
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 550 mA, Pout = 36 W Avg.,
869- 894 MHz, 920 - 960 MHz GSM EDGE Modulation
Power Gain
Gps — 19 — dB
Drain Efficiency
ηD — 42 — %
Error Vector Magnitude
EVM
2.5
— % rms
Spectral Regrowth at 400 kHz Offset
SR1 — - 63 — dBc
Spectral Regrowth at 600 kHz Offset
SR2 — - 77 — dBc
1. Part is internally matched on input.
MRF5S9080NR1 MRF5S9080NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF5S9080NBR1
Description GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
Maker Freescale Semiconductor
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MRF5S9080NBR1 Datasheet PDF






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