MRF5S9080NBR1 Overview
Freescale Semiconductor Technical Data Document Number: 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
MRF5S9080NBR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 200_C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings
- 960 MHz, 80 W, 26 V GSM/GSM EDGE LATERAL N
- CHANNEL RF POWER MOSFETs