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MRF5S9100NBR1 Datasheet SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF5S9100NBR1 datasheet PDF. This datasheet also includes the MRF5S9100NR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF5S9100NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev.

5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.

Key Features

  • www. DataSheet4U. com.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9100NR1 MRF5S9100NBR1 880 MHz, 20 W AVG. , 26 V SINGLE N - CDMA LATER.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S9100NR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
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MRF5S9101NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9150HSR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9070NR1 SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
MRF5S9080NBR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9080NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S19060MBR1 RF Power Field Effect Transistors
MRF5S19060MR1 RF Power Field Effect Transistors