MRF5S9100NBR1 Overview
Freescale Semiconductor Technical Data Document Number: 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 26 volt base station equipment.
MRF5S9100NBR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- CDMA LATERAL N