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Freescale Semiconductor Electronic Components Datasheet

MRF5S9100NBR1 Datasheet

SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
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9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 28%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
www.DatFaeShaetuerte4Us.com
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5S9100N
Rev. 5, 5/2006
MRF5S9100NR1
MRF5S9100NBR1
880 MHz, 20 W AVG., 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, + 15
336
1.92
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 20 W CW
RθJC
0.52
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9100NR1 MRF5S9100NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MRF5S9100NBR1 Datasheet

SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

No Preview Available !

Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
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IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μA)
VGS(th)
2
2.8 3.5 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 950 mAdc)
VGS(Q)
3.7
— Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
0.21
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs — 7 — S
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
70
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.2 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps 18 19.5 — dB
Drain Efficiency
ηD 26 28 — %
Adjacent Channel Power Ratio
ACPR
- 46.8
- 45
dBc
Input Return Loss
IRL — - 19 - 9 dB
1. Part internally input matched.
MRF5S9100NR1 MRF5S9100NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF5S9100NBR1
Description SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
Maker Freescale Semiconductor
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MRF5S9100NBR1 Datasheet PDF






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