MRF5S9150HR3 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters .. - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Lower Thermal Resistance Package - Low Gold Plating Thickness on Leads, 40μ″ Nominal. - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S9150HR3 MRF5S9150HSR3 880 MHz, 33 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S9150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S9150HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +15 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW Case Temperature 76°C, 33 W CW Symbol RθJC Value (1) 0.34 0.34 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S9150HR3 MRF5S9150HSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 600 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1500 m Adc, Measured in Functional Test) Drain- Source On -...