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Freescale Semiconductor Electronic Components Datasheet

MRF5S9150HR3 Datasheet

SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 869
to 960 MHz. Suitable for multicarrier amplifier applications.
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9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.7 dB
Drain Efficiency — 28.4%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
www.DataShIneteetr4nUa.cllyomMatched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μNominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF5S9150H
Rev. 1, 5/2006
MRF5S9150HR3
MRF5S9150HSR3
880 MHz, 33 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S9150HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S9150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +68
- 0.5, +15
- 65 to +150
150
200
Characteristic
Symbol
Value (1)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
Case Temperature 76°C, 33 W CW
RθJC
0.34
0.34
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9150HR3 MRF5S9150HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF5S9150HR3 Datasheet

SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

No Preview Available !

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
— 500 nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 600 μAdc)
VGS(th)
2
3
4 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
VGS(Q)
3
4
5 Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.15 Adc)
wwwD.DyanatamSihceCeht4aUra.cctoemristics (1)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 3.1 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 91.5 —
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 18.5 19.7 21.5 dB
Drain Efficiency
ηD 26.5 28.4 —
%
Adjacent Channel Power Ratio
ACPR
- 46.8
- 45
dBc
Input Return Loss
IRL — - 20 - 9 dB
1. Part internally input matched.
MRF5S9150HR3 MRF5S9150HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF5S9150HR3
Description SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
Maker Freescale Semiconductor
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