MRF6S18100NBR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF6S18100NBR1 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF6S18100NBR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	744.16 KB
Description	RF Power Field Effect Transistors
Download	MRF6S18100NBR1 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz .

S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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