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MRF6S18100NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF6S18100NR1 datasheet PDF. This datasheet also includes the MRF6S18100NBR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF6S18100NBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz .

S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
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