MRF6S18100NR1

MRF6S18100NR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.

MRF6S18100NR1 Datasheet

Part number	MRF6S18100NR1
Download	MRF6S18100NR1 Datasheet (PDF)
File Size	744.16 KB
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors

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MRF6S18100NR1 Distributor

MRF6S18100NR1 Description

Freescale Semiconductor Technical Data Document Number: 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications.

MRF6S18100NR1 Key Features

Characterized with Series Equivalent Large
Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

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