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MRF6S19120HR3 Datasheet RF Power Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

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Overview

Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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