Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF6S23140H Rev. 1, 5/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL applications.
- Typical 2
- Carrier W
- CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain
- 15.2 dB Drain Efficiency
- 25% IM3 @ 10 MHz Offset
- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5...