MRF6V13250HR3 - RF Power Field Effect Transistors

Freescale Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF6V13250HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	880.84 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6V13250HR3 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev.

0, 6/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz.

These devices are suitable for use in pulsed and CW applications.

Key Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 50 VDD Operation.
Characterized from 20 V to 50 V for Extended Power Range.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel.

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