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MRF6V12500GS Datasheet

RF Power LDMOS Transistors

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Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for applications operating at
frequencies between 960 and 1215 MHz such as distance measuring
equipment (DME), transponders and secondary radars for air traffic control.
These devices are suitable for use in pulse applications, including Mode S
ELM.
Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA
Application
Signal Type
Pout (1)
(W)
Freq.
(MHz)
Gps D
(dB) (%)
Narrowband
Pulse
500 Peak
Short Pulse (128 sec, 10% Duty Cycle)
1030
19.7 62.0
Narrowband
Mode S ELM
Pulse
(48 (32 sec on, 18 sec off),
Period 2.4 msec,
6.4% Long--term Duty Cycle)
500 Peak
1030
19.7 62.0
Broadband
Pulse
500 Peak 960--1215 18.5 57.0
(128 sec, 10% Duty Cycle)
1. Minimum output power for each specified pulse condition.
Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Document Number: MRF6V12500H
Rev. 5, 7/2016
MRF6V12500H
MRF6V12500HS
MRF6V12500GS
960--1215 MHz, 500 W, 50 V
PULSE
RF POWER LDMOS TRANSISTORS
NI--780H--2L
MRF6V12500H
NI--780S--2L
MRF6V12500HS
NI--780GS--2L
MRF6V12500GS
Gate 2
1 Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2009--2010, 2012, 2015--2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6V12500H MRF6V12500HS MRF6V12500GS
1


NXP Semiconductors Electronic Components Datasheet

MRF6V12500GS Datasheet

RF Power LDMOS Transistors

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
Tstg
TC
TJ
Symbol
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Value (2,3)
Vdc
Vdc
C
C
C
Unit
Thermal Impedance, Junction to Case
Case Temperature 80C, 500 W Peak, 128 sec Pulse Width, 10% Duty Cycle
Table 3. ESD Protection Characteristics
ZJC
0.044
C/W
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2600 V
Machine Model (per EIA/JESD22--A115)
B, passes 200 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 200 mA)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 90 Vdc, VGS = 0 Vdc)
IGSS
10 Adc
V(BR)DSS
110
— Vdc
IDSS
20 Adc
IDSS
— 200 Adc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 1.32 mA)
VGS(th)
0.9
1.7
2.4 Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test)
VGS(Q)
1.7
2.4
3.2 Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.26 Adc)
VDS(on)
0.25
Vdc
Dynamic Characteristics (4)
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 0.2 — pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 697 —
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss — 1391 — pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Part internally matched both on input and output.
(continued)
MRF6V12500H MRF6V12500HS MRF6V12500GS
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number MRF6V12500GS
Description RF Power LDMOS Transistors
Maker NXP
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