MRF6V12500GS Datasheet | NXP Semiconductors

Features - Characterized with Series Equivalent Large--Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified up to a Maximum of 50 VDD Operation - Integrated ESD Protection - Greater Negative Gate--Source Voltage Range for Improved Class C Operation Document Number: MRF6V12500H Rev. 5, 7/2016 MRF6V12500H MRF6V12500HS MRF6V12500GS 960--1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS TRANSISTORS NI--780H--2L MRF6V12500H NI--780S--2L MRF6V12500HS NI--780GS--2L MRF6V12500GS Gate 2 1 Drain (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2009--2010, 2012, 2015--2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF6V12500H MRF6V12500HS MRF6V12500GS 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic VDSS VGS Tstg TC TJ Symbol --0.5, +110 --6.0, +10 -- 65 to +150 150 225 Value (2,3) Vdc Vdc C C C Unit Thermal Impedance, Junction to Case Case Temperature 80C, 500 W Peak, 128 sec Pulse Width, 10% Duty Cycle Table 3. ESD Protection Characteristics ZJC...