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MRF6V12500GS - RF Power LDMOS Transistors

This page provides the datasheet information for the MRF6V12500GS, a member of the MRF6V12500H RF Power LDMOS Transistors family.

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation Document Number: MRF6V12500H Rev. 5, 7/2016 MRF6V12500H MRF6V12500HS MRF6V12500GS 960--1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS.

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Datasheet Details

Part number MRF6V12500GS
Manufacturer NXP
File Size 805.20 KB
Description RF Power LDMOS Transistors
Datasheet download datasheet MRF6V12500GS Datasheet
Additional preview pages of the MRF6V12500GS datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.  Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Application Signal Type Pout (1) (W) Freq. (MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128 sec, 10% Duty Cycle) 1030 19.7 62.0 Narrowband Mode S ELM Pulse (48  (32 sec on, 18 sec off), Period 2.4 msec, 6.4% Long--term Duty Cycle) 500 Peak 1030 19.7 62.0 Broadband Pulse 500 Peak 960--1215 18.5 57.
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