NXP Semiconductors Electronic Components Datasheet

MRF6V12500GS Datasheet

RF Power LDMOS Transistors

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Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These RF power transistors are designed for applications operating at

frequencies between 960 and 1215 MHz such as distance measuring

equipment (DME), transponders and secondary radars for air traffic control.

These devices are suitable for use in pulse applications, including Mode S

ELM.

 Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA

Application

Signal Type

Pout (1)

(W)

Freq.

(MHz)

Gps D

(dB) (%)

Narrowband

Pulse

500 Peak

Short Pulse (128 sec, 10% Duty Cycle)

1030

19.7 62.0

Narrowband

Mode S ELM

Pulse

(48  (32 sec on, 18 sec off),

Period 2.4 msec,

6.4% Long--term Duty Cycle)

500 Peak

1030

19.7 62.0

Broadband

Pulse

500 Peak 960--1215 18.5 57.0

(128 sec, 10% Duty Cycle)

1. Minimum output power for each specified pulse condition.

 Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak

Power

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 Internally Matched for Ease of Use

 Qualified up to a Maximum of 50 VDD Operation

 Integrated ESD Protection

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Document Number: MRF6V12500H

Rev. 5, 7/2016

MRF6V12500H

MRF6V12500HS

MRF6V12500GS

960--1215 MHz, 500 W, 50 V

PULSE

RF POWER LDMOS TRANSISTORS

NI--780H--2L

MRF6V12500H

NI--780S--2L

MRF6V12500HS

NI--780GS--2L

MRF6V12500GS

Gate 2

1 Drain

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

RF Device Data

Freescale Semiconductor, Inc.

MRF6V12500H MRF6V12500HS MRF6V12500GS

NXP Semiconductors Electronic Components Datasheet

MRF6V12500GS Datasheet

RF Power LDMOS Transistors

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Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Table 2. Thermal Characteristics

Characteristic

VDSS

VGS

Tstg

Symbol

--0.5, +110

--6.0, +10

-- 65 to +150

150

225

Value (2,3)

Vdc

C

Unit

Thermal Impedance, Junction to Case

Case Temperature 80C, 500 W Peak, 128 sec Pulse Width, 10% Duty Cycle

Table 3. ESD Protection Characteristics

ZJC

0.044

C/W

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2600 V

Machine Model (per EIA/JESD22--A115)

B, passes 200 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

Off Characteristics

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage

(VGS = 0 Vdc, ID = 200 mA)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 90 Vdc, VGS = 0 Vdc)

IGSS

—

10 Adc

V(BR)DSS

110

—

— Vdc

IDSS

—

20 Adc

IDSS

—

— 200 Adc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 1.32 mA)

VGS(th)

0.9

1.7

2.4 Vdc

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test)

VGS(Q)

1.7

2.4

3.2 Vdc

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 3.26 Adc)

VDS(on)

—

0.25

—

Vdc

Dynamic Characteristics (4)

Reverse Transfer Capacitance

(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss — 0.2 — pF

Output Capacitance

(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss — 697 —

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss — 1391 — pF

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com/RF/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

4. Part internally matched both on input and output.

(continued)

MRF6V12500H MRF6V12500HS MRF6V12500GS

RF Device Data

Freescale Semiconductor, Inc.

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