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MRF6V12500GS, MRF6V12500H RF Power LDMOS Transistors

MRF6V12500GS Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistors N *Channel Enhancement *Mode Lateral MOSFETs These RF power transist.

MRF6V12500GS Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation D

MRF6V12500GS Applications

* operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.
* Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA App

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF6V12500GS, MRF6V12500H. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF6V12500GS, MRF6V12500H
Manufacturer
NXP ↗
File Size
805.20 KB
Datasheet
MRF6V12500H-NXP.pdf
Description
RF Power LDMOS Transistors
Note
This datasheet PDF includes multiple part numbers: MRF6V12500GS, MRF6V12500H.
Please refer to the document for exact specifications by model.

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Power LDMOS Transistors NXP
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