MRF6V12500HSR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operatio.
operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
* Typi.
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