MRF6VP2600HR6 Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. Typical DVB--T OFDM Performance:.
MRF6VP2600HR6 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- CW Operation Capability with Adequate Cooling
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push--Pull Operation
- Greater Negative Gate--Source Voltage Range for Improved Class C
- RoHS pliant
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
- 0.5, +110
- 6.0, +10