MRF6VP41KHR6 - RF Power FET

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
CW Operation Capability with Adequate Cooling.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Designed for Push--Pull Operation.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. For R5 Tape and Reel option, see p. 17. Document Number: MRF6VP41.

Freescale Semiconductor

Datasheet Details

Part number	MRF6VP41KHR6
Manufacturer	Freescale Semiconductor
File Size	1.32 MB
Description	RF Power FET
Datasheet	MRF6VP41KHR6 Datasheet
Additional preview pages of the MRF6VP41KHR6 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.

Published: Nov 30, 2008 |