• Part: MRF6VP41KHR6
  • Description: RF Power FET
  • Manufacturer: Freescale Semiconductor
  • Size: 1.32 MB
Download MRF6VP41KHR6 Datasheet PDF
Freescale Semiconductor
MRF6VP41KHR6
MRF6VP41KHR6 is RF Power FET manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. - Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain - 20 dB Drain Efficiency - 64% - Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features - Characterized with Series Equivalent Large--Signal Impedance Parameters - CW Operation Capability with Adequate Cooling -...