MRF6VP21KHR6 Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. Typical Pulsed Performance at 225 MHz:.
MRF6VP21KHR6 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- CW Operation Capability with Adequate Cooling
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push--Pull Operation
- Greater Negative Gate--Source Voltage Range for Improved Class C
- RoHS pliant
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
- 0.5, +110
- 6, +10