MRF6VP21KHR6 - RF Power FET

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
CW Operation Capability with Adequate Cooling.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Designed for Push--Pull Operation.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Document Number: MRF6VP21KH Rev. 4, 4/20.

Freescale Semiconductor

Datasheet Details

Part number	MRF6VP21KHR6
Manufacturer	Freescale Semiconductor
File Size	742.13 KB
Description	RF Power FET
Datasheet	MRF6VP21KHR6 Datasheet
Additional preview pages of the MRF6VP21KHR6 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. • Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 24 dB Drain Efficiency — 67.

Published: Nov 30, 2008 |