MRF6VP21KHR6
MRF6VP21KHR6 is RF Power FET manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.
- Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain
- 24 dB Drain Efficiency
- 67.5%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power
Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- CW Operation Capability with Adequate Cooling
-...
