MRF6VP2600HR6 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. - Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain - 25 dB Drain Efficiency - 28.5% ACPR @ 4 MHz Offset - --61 dBc @ 4 kHz Bandwidth - Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain -...