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MRF7S38075HSR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, MHz Channel Bandwidth, Input Signal PAR = 9.5 6d=4B9Q@0A0M0m.0A31/,4%P, 4oPubtro=ubrsatbsi,lit7y on CCDF. Power Gain — 14 dB Drain Efficiency — 14% Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 49 dBc in 0.

Download the MRF7S38075HSR3 datasheet PDF. This datasheet also includes the MRF7S38075HR3 variant, as both parts are published together in a single manufacturer document.

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Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF7S38075H Rev. 0, 8/2007 MRF7S38075HR3 MRF7S38075HSR3 3400 - 3600 MHz, 12 W AVG. , 30 V WiMAX.

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