MRF7S38075HR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF7S38075HR3

MRF7S38075HR3 - RF Power Field Effect Transistors

Description

Part Number B1, B2 Small Ferrite Beads 2743019447 C1, C2, C4, C6 2.7 pF Chip Capacitors ATC100B2R7BT500XT C3, C7 100 pF Chip Capacitors ATC100B101FT500XT C5 22 μF, 35 V Electrolytic Capacitor EMVY350ADA221MHA0G C9 100 μF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017 - RF C10, C11

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF7S38075H Rev. 0, 8/2007 MRF7S38075HR3 MRF7S38075HSR3 3400 - 3600 MHz, 12 W AVG. , 30 V WiMAX.

Datasheet Details

Part number	MRF7S38075HR3
Manufacturer	Freescale Semiconductor
File Size	429.76 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S38075HR3 Datasheet
Additional preview pages of the MRF7S38075HR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, MHz Channel Bandwidth, Input Signal PAR = 9.5 6d=4B9Q@0A0M0m.0A31/,4%P, 4oPubtro=ubrsatbsi,lit7y on CCDF. Power Gain — 14 dB Drain Efficiency — 14% Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 49 dBc in 0.

Published: Feb 25, 2015 |