• Part: MRF7S38075HSR3
  • Description: RF Power Field Effect Transistors
  • Manufacturer: Freescale Semiconductor
  • Size: 429.76 KB
Download MRF7S38075HSR3 Datasheet PDF
Freescale Semiconductor
MRF7S38075HSR3
MRF7S38075HSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF7S38075HR3 comparator family.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. - Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, MHz Channel Bandwidth, Input Signal PAR = 9.5 6d=4B9Q@0A0M0m.0A31/,4%P, 4oPubtro=ubrsatbsi,lit7y on CCDF. Power Gain - 14 dB Drain Efficiency - 14% Device Output Signal PAR - 8.7 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset - - 49 dBc in 0.5 MHz Channel Bandwidth - Capable of Handling...