MRF8HP21130HR3 - RF Power Field Effect Transistors

Freescale Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF8HP21130HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	580.64 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8HP21130HR3 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.

0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

Advanced High Performance In--Package Doherty.
Production Tested in a Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction.

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