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MRF8HP21130HSR3 - RF Power Field Effect Transistors

Download the MRF8HP21130HSR3 datasheet PDF. This datasheet also includes the MRF8HP21130HR3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF8HP21130HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.

0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

  • Advanced High Performance In--Package Doherty.
  • Production Tested in a Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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