MRF8P23080HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF8P23080HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF8P23080HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	690.62 KB
Description	RF Power Field Effect Transistors
Download	MRF8P23080HR3 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MRF8P23080H www.DataSheet4U.com Rev.

0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.

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