MRF8P23080HR3 Datasheet (RF Power Field Effect Transistors)

Part: MRF8P23080HR3
Manufacturer: Freescale Semiconductor
Size: 690.62 KB

MRF8P23080HR3 Key Features

Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and mon Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS pliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel

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MRF8P23080HR3 Description

Freescale Semiconductor Technical Data Document Number: 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.