• Part: MRF8S18120HSR3
  • Description: RF Power Field Effect Transistors
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 323.53 KB
Download MRF8S18120HSR3 Datasheet PDF
Freescale Semiconductor
MRF8S18120HSR3
Features - Characterized with Series Equivalent Large - Signal Impedance Parameters and mon Source S - Parameters - Internally Matched for Ease of Use - Integrated ESD Protection - Greater Negative Gate - Source Voltage Range for Improved Class C Operation - Optimized for Doherty Applications .. - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://.freescale./rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S18120HR3 MRF8S18120HSR3 1 RF Device Data...