MRF8S18120HSR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated .
with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
12 pF Chip Capacitors 9.1 pF Chip Capacitors 10 nF Chip Capacitor 8.2 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitors 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 10 Ω, 1/4 W Chip Resistor 4.75 Ω, 1/4.
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