MRF8S18120HSR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF8S18120HSR3

MRF8S18120HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF8S18120HSR3, a member of the MRF8S18120HR3 RF Power Field Effect Transistors family.

Description

12 pF Chip Capacitors 9.1 pF Chip Capacitors 10 nF Chip Capacitor 8.2 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitors 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 10 Ω, 1/4 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 Part Number ATC

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Optimized for Doherty.

Datasheet Details

Part number	MRF8S18120HSR3
Manufacturer	Freescale Semiconductor
File Size	323.53 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S18120HSR3 Datasheet
Additional preview pages of the MRF8S18120HSR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.7 hD (%) 49.8 51.4 53.

Published: Feb 9, 2010 |