MRF8S19140HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF8S19140HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF8S19140HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	435.48 KB
Description	RF Power Field Effect Transistors
Download	MRF8S19140HR3 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.DataSheet4U.com Rev.

0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF8S19140HSR3	RF Power Field Effect Transistors
MRF8S18120HR3	RF Power Field Effect Transistors
MRF8S18120HSR3	RF Power Field Effect Transistors
MRF8S18210WGHSR3	RF Power Field Effect Transistors
MRF8S18210WHSR3	RF Power Field Effect Transistors
MRF8S18260HR6	RF Power Field Effect Transistors
MRF8S18260HSR6	RF Power Field Effect Transistors
MRF8S21200HR6	RF Power Field Effect Transistors
MRF8S21200HSR6	RF Power Field Effect Transistors
MRF8S7170NR3	RF Power Field Effect Transistor