MRF8S18210WGHSR3 Overview
Freescale Semiconductor Technical Data Document Number: 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S18210WGHSR3 Key Features
- Designed for Wide Instantaneous Bandwidth
MRF8S18210WGHSR3 Applications
- 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=i
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout)