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MRF8S18210WGHSR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility on CCDF. Frequency 1930 MHz 1960 MHz 1995 MHz Gps (dB) 17.8 17.8 18.1 ηD Output PAR ACPR (%) (dB) (dBc) 29.2 7.0 --34.2 28.2 7.0 --34.4 27.6 7.1 --34.3 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB pression Point ≃ 210 Watts CW 1800 MHz • Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.1 18.2 ηD Output PAR ACPR (%) (dB) (dBc) 30.1 7.3 --35.1 29.1 7.4 --35.4 27.8 7.4 --35.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Designed for Wide Instantaneous Bandwidth.

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