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MRF8S18210WGHSR3 - RF Power Field Effect Transistors

Download the MRF8S18210WGHSR3 datasheet PDF. This datasheet also covers the MRF8S18210WHSR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

2.2 μF Chip Capacitors Part Number C3225X7R2A225M C3, C4, C5, C6, C7, C8 10 μF Chip Capacitors C5750X7S2A106MT C9, C10, C11, C12, C13, C14 8.2 pF Chip Capacitors ATC100B8R2BT500XT C15 1.3 pF Chip Capacitor ATC100B1R3BT500XT C16, C21 1.8 pF Chip Capacitors ATC100B1R8BT500XT C17 2.0 pF Chi

Key Features

  • Designed for Wide Instantaneous Bandwidth.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8S18210WHSR3-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S21140HR3 RF Power Field Effect Transistors NXP
MRF8S21140HSR3 RF Power Field Effect Transistors NXP
MRF8S26060HR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26060HSR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26120HR3 RF Power Field Effect Transistor Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S18210WHSR3 RF Power Field Effect Transistors
MRF8S18260HR6 RF Power Field Effect Transistors
MRF8S18260HSR6 RF Power Field Effect Transistors
MRF8S18120HR3 RF Power Field Effect Transistors
MRF8S18120HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility on CCDF. Frequency 1930 MHz 1960 MHz 1995 MHz Gps (dB) 17.8 17.8 18.1 ηD Output PAR ACPR (%) (dB) (dBc) 29.2 7.0 --34.2 28.2 7.0 --34.4 27.6 7.1 --34.