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MRF8S18260HR6 - RF Power Field Effect Transistors

General Description

Part Number C1 2.2 pF Chip Capacitor ATC600F2R2BT250XT C2, C7, C8, C14, C20, C21 15 pF Chip Capacitors ATC600F150JT250XT C3, C4, C5, C6 C16, C17, C18, C19 1.0 pF Chip Capacitors ATC600F1R0BT250XT C9, C10, C22, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C11, C12 47 μF, 35 V Ele

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S18260HSR6 RF Power Field Effect Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8S18260H Rev. 1, 2/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 1BT6yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a7rM4riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und7ce.e5C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility on CCDF. Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 1805 MHz 17.9 31.6 6.0 --35.0 1840 MHz 17.9 31.9 6.0 --36.0 1880 MHz 17.9 32.5 5.9 --36.