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MRF8S18210WHSR3 - RF Power Field Effect Transistors

General Description

2.2 μF Chip Capacitors Part Number C3225X7R2A225M C3, C4, C5, C6, C7, C8 10 μF Chip Capacitors C5750X7S2A106MT C9, C10, C11, C12, C13, C14 8.2 pF Chip Capacitors ATC100B8R2BT500XT C15 1.3 pF Chip Capacitor ATC100B1R3BT500XT C16, C21 1.8 pF Chip Capacitors ATC100B1R8BT500XT C17 2.0 pF Chi

Key Features

  • Designed for Wide Instantaneous Bandwidth.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility on CCDF. Frequency 1930 MHz 1960 MHz 1995 MHz Gps (dB) 17.8 17.8 18.1 ηD Output PAR ACPR (%) (dB) (dBc) 29.2 7.0 --34.2 28.2 7.0 --34.4 27.6 7.1 --34.